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Influence of pulse width on electroluminescence and junction temperature of AlInGaN deep ultraviolet light-emitting diodes
J Zhang et al.
Applied Physics Letters 92 (19), 191917 (2008)
info:doi/10.1063/1.2931698
Posted by utschwarz with 1 comment to localization led uv on Wed May 28 2008 at 07:46 UTC | info | related
 
Effect of the barrier composition on the polarization fields in near UV InGaN light emitting diodes
A Knauer et al.
Applied Physics Letters 92 (19), 191912 (2008)
info:doi/10.1063/1.2930686
Posted by utschwarz with 1 comment to uv led polarization on Wed May 28 2008 at 07:40 UTC | info | related
 
Realization of 340-nm-Band High-Output-Power (>7 mW) InAlGaN Quantum Well Ultraviolet Light-Emitting Diode with p-Type InAlGaN
S Fujikawa et al.
Japanese Journal of Applied Physics 47, 2941 (2008)
info:doi/10.1143/JJAP.47.2941
Posted by utschwarz to uv led on Wed Apr 30 2008 at 07:34 UTC | info | related

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