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A-plane GaN epitaxial lateral overgrowth structures: Growth domains, morphological defects, and impurity incorporation directly imaged by cathodoluminescence microscopy
B Bastek et al.
Applied Physics Letters 92 (21), 212111 (2008)
info:doi/10.1063/1.2920846
Posted by utschwarz with 1 comment to elog nonpolar on Mon Jun 02 2008 at 11:10 UTC | info | related
 
Line defects of M-plane GaN grown on gamma-LiAlO[sub 2] by plasma-assisted molecular beam epitaxy
Ikai Lo et al.
Applied Physics Letters 92 (20), 202106 (2008)
info:doi/10.1063/1.2924288
Posted by utschwarz with 1 comment to Dislocations nonpolar on Sat May 24 2008 at 08:49 UTC | info | related
 
Cubic GaN/AlN multiple quantum well photodetector
Jr. E. A. DeCuir et al.
Applied Physics Letters 92 (20), 201910 (2008)
info:doi/10.1063/1.2936279
Posted by utschwarz with 1 comment to nonpolar on Sat May 24 2008 at 08:47 UTC | info | related
 
Optical characteristics of a-plane InGaN/GaN multiple quantum wells with different well widths
T Ko et al.
Applied Physics Letters 90 (18), 181122 (2007)
info:doi/10.1063/1.2735935
Posted by utschwarz with 1 comment to nonpolar on Wed May 14 2008 at 19:16 UTC | info | related
 
Dynamic polarization filtering in anisotropically strained M-plane GaN films
K Omae et al.
Applied Physics Letters 86 (19), 191909 (2005)
info:doi/10.1063/1.1927271
Posted by utschwarz with 1 comment to nonpolar on Wed May 14 2008 at 19:16 UTC | info | related
 
Optical properties of nearly stacking-fault-free m-plane GaN homoepitaxial films grown by metal organic vapor phase epitaxy on low defect density freestanding GaN substrates
S Chichibu et al.
Applied Physics Letters 92 (9), 091912 (2008)
info:doi/10.1063/1.2842387
Posted by utschwarz with 1 comment to nonpolar on Wed May 14 2008 at 19:15 UTC | info | related
 
Sheet carrier density enhancement by Si[sub 3]N[sub 4] passivation on nonpolar a-plane (11[overline 2]0) sapphire grown AlGaN/GaN heterostructures
S Arulkumaran et al.
Applied Physics Letters 92 (9), 092116 (2008)
info:doi/10.1063/1.2857479
Posted by utschwarz with 1 comment to nonpolar on Wed May 14 2008 at 19:14 UTC | info | related
 
Growth of p-type and n-type m-plane GaN by molecular beam epitaxy
M McLaurin et al.
Journal of Applied Physics 100 (6), 063707 (2006)
info:doi/10.1063/1.2338602
Posted by utschwarz with 1 comment to nonpolar on Wed May 14 2008 at 19:13 UTC | info | related
 
Optical polarization characteristics of InGaN/GaN light-emitting diodes fabricated on GaN substrates oriented between (10[overline 1]0) and (10[overline 1][overline 1]) planes
Hisashi Masui et al.
Applied Physics Letters 92 (9), 091105 (2008)
info:doi/10.1063/1.2890050
Posted by utschwarz with 1 comment to nonpolar on Wed May 14 2008 at 19:12 UTC | info | related
 
Structural and morphological characteristics of planar (112-bar 0) a-plane gallium nitride grown by hydride vapor phase epitaxy
B Haskell et al.
Applied Physics Letters 83 (8), 1554-6 (2003)
info:doi/10.1063/1.1604174
Posted by utschwarz with 1 comment to nonpolar on Wed May 14 2008 at 19:09 UTC | info | related

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