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[0001] composition modulations in Al[sub 0.4]Ga[sub 0.6]N layers grown by molecular beam epitaxy
A Wise et al.
Applied Physics Letters 92 (26), 261914 (2008)
info:doi/10.1063/1.2953451
Posted by utschwarz with 1 comment to morphology on Sun Jul 27 2008 at 11:27 UTC | info | related
 
Dislocation network at InN/GaN interface revealed by scanning tunneling microscopy
Y Liu et al.
Applied Physics Letters 92 (23), 231907 (2008)
info:doi/10.1063/1.2944145
Posted by utschwarz with 1 comment to Dislocations morphology on Fri Jun 20 2008 at 08:00 UTC | info | related
 
Suppression of phase separation in InGaN due to elastic strain
S Yu
MRS Internet J. Nitride Semicond. Res. 3 (16), 1-6
Posted by utschwarz with 1 comment to strain morphology on Fri Jun 13 2008 at 13:58 UTC | info | related
 
Chemical ordering in wurtzite In[sub x]Ga[sub 1 - x]N layers grown on (0001) sapphire by metalorganic vapor phase epitaxy
P Ruterana et al.
Applied Physics Letters 72 (14), 1742-4 (1998)
info:doi/10.1063/1.121170
Posted by utschwarz with 1 comment to morphology on Fri Jun 13 2008 at 12:58 UTC | info | related
 
Observation of metallic indium clusters in thick InGaN layer grown by metal organic chemical vapor deposition
X Zhu et al.
Applied Physics Letters 91 (17), 172110 (2007)
info:doi/10.1063/1.2802073
Posted by utschwarz with 1 comment to morphology on Fri Jun 13 2008 at 12:53 UTC | info | related
 
Phase separation and ordering coexisting in In[sub x]Ga[sub 1 - x]N grown by metal organic chemical vapor deposition
M Behbehani et al.
Applied Physics Letters 75 (15), 2202-4 (1999)
info:doi/10.1063/1.124964
Posted by utschwarz with 1 comment to morphology on Fri Jun 13 2008 at 12:38 UTC | info | related
 
Modeling the compositional instability in wurtzite Ga[sub 1 - x]In[sub x]N
M Ganchenkova et al.
Physical Review B (Condensed Matter and Materials Physics) 77 (7), 075207 (2008)
info:doi/10.1103/PhysRevB.77.075207
Posted by utschwarz with 1 comment to morphology on Tue Jun 10 2008 at 15:25 UTC | info | related
 
Impact of GaN buffer layer on the growth and properties of InN islands
O Laboutin and R Welser
Applied Physics Letters 92 (22), 223103 (2008)
info:doi/10.1063/1.2939216
Posted by utschwarz with 1 comment to Dislocations morphology on Sat Jun 07 2008 at 08:59 UTC | info | related
 
Correlation of cathodoluminescence inhomogeneity with microstructural defects in epitaxial GaN grown by metalorganic chemical-vapor deposition
S Rosner et al.
Applied Physics Letters 70 (4), 420-2 (1997)
info:doi/10.1063/1.118322
Posted by utschwarz with 1 comment to morphology Dislocations on Tue Jun 03 2008 at 12:25 UTC | info | related
 
Two- and three-dimensional growth modes of nitride layers
K Pakula, J Baranowski, and J Borysiuk
Crystal Research and Technology 42 (12), 1176 (2007)
info:doi/10.1002/crat.200711003
Posted by utschwarz with 1 comment to Dislocations morphology on Tue Jun 03 2008 at 11:45 UTC | info | related

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