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Influence of pulse width on electroluminescence and junction temperature of AlInGaN deep ultraviolet light-emitting diodes
J Zhang et al.
Applied Physics Letters 92 (19), 191917 (2008)
Posted by utschwarz with 1 comment to localization led uv on Wed May 28 2008 at 07:46 UTC | info | related
 
Temperature dependence of polarized electroluminescence side emission from (0001)-oriented blue and violet InGaN/GaN light-emitting diodes
Xiaozhang Du et al.
Applied Physics Letters 92 (20), 203504 (2008)
 
Efficient green emission from (11[overline 2]2) InGaN/GaN quantum wells on GaN microfacets probed by scanning near field optical microscopy
Y Kawakami et al.
Applied Physics Letters 90 (26), 261912 (2007)
 
Optical and microstructural studies of atomically flat ultrathin In-rich InGaN/GaN multiple quantum wells
Soon-Yong Kwon et al.
Journal of Applied Physics 103 (6), 063509 (2008)
Posted by utschwarz to localization on Sat May 03 2008 at 18:24 UTC | info | related
 
Optical and microstructural studies of InGaN/GaN single-quantum-well structures
D Graham et al.
Journal of Applied Physics 97 (10), 103508 (2005)
Posted by utschwarz with 1 comment to localization on Sat May 03 2008 at 16:17 UTC | info | related
 
Correlation between luminescence and compositional striations in InGaN layers grown on miscut GaN substrates
M Krysko et al.
Applied Physics Letters 91 (21), 211904 (2007)

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