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A-plane GaN epitaxial lateral overgrowth structures: Growth domains, morphological defects, and impurity incorporation directly imaged by cathodoluminescence microscopy
B Bastek et al.
Applied Physics Letters 92 (21), 212111 (2008)
info:doi/10.1063/1.2920846
Posted by utschwarz with 1 comment to elog nonpolar on Mon Jun 02 2008 at 11:10 UTC | info | related
 
Bright semipolar GaInN/GaN blue light emitting diode on side facets of selectively grown GaN stripes
Thomas Wunderer et al.
Applied Physics Letters 89 (4), 041121 (2006)
info:doi/10.1063/1.2240307
Posted by utschwarz with 1 comment to led elog semipolar on Thu May 08 2008 at 20:42 UTC | info | related
 
Investigations on local Ga and In incorporation of GaInN quantum wells on facets of selectively grown GaN stripes
B Neubert et al.
physica status solidi (c) 3 (6), 1587 (2006)
info:doi/10.1002/pssc.200565185
Posted by utschwarz with 1 comment to elog semipolar on Thu May 08 2008 at 20:35 UTC | info | related
 
Tailored emission color synthesis using microfacet quantum wells consisting of nitride semiconductors without phosphors
M Funato et al.
Applied Physics Letters 88 (26), 261920 (2006)
info:doi/10.1063/1.2217259
Posted by utschwarz with 1 comment to elog semipolar on Thu May 08 2008 at 20:27 UTC | info | related
 
GaInN quantum wells grown on facets of selectively grown GaN stripes
Barbara Neubert et al.
Applied Physics Letters 87 (18), 182111 (2005)
info:doi/10.1063/1.2126798
Posted by utschwarz with 1 comment to elog semipolar on Thu May 08 2008 at 20:17 UTC | info | related
 
Polychromatic light emission from single InGaN quantum wells grown on pyramidal GaN facets
S Srinivasan et al.
Applied Physics Letters 87 (13), 131911 (2005)
info:doi/10.1063/1.2067693
Posted by utschwarz with 1 comment to elog semipolar on Thu May 08 2008 at 20:15 UTC | info | related
 
Efficient radiative recombination from <11[overline 2]2> -oriented In[sub x]Ga[sub 1 - x]N multiple quantum wells fabricated by the regrowth technique
K Nishizuka et al.
Applied Physics Letters 85 (15), 3122-4 (2004)
info:doi/10.1063/1.1806266
Posted by utschwarz with 1 comment to elog semipolar on Thu May 08 2008 at 20:14 UTC | info | related
 
Carrier dynamics and electrostatic potential variation in InGaN quantum wells grown on 11[overline 2]2 GaN pyramidal planes
S Srinivasan et al.
Applied Physics Letters 89 (23), 231908 (2006)
info:doi/10.1063/1.2397566
Posted by utschwarz with 1 comment to piezoelectric field elog semipolar on Thu May 08 2008 at 20:13 UTC | info | related
 
Local electronic and optical behaviors of a-plane GaN grown via epitaxial lateral overgrowth
J Moore et al.
Applied Physics Letters 90 (1), 011913 (2007)
info:doi/10.1063/1.2429901
Posted by utschwarz to elog nonpolar on Thu May 08 2008 at 20:07 UTC | info | related
 
Trenched epitaxial lateral overgrowth of fast coalesced a-plane GaN with low dislocation density
Te-Chung Wang et al.
Applied Physics Letters 89 (25), 251109 (2006)
info:doi/10.1063/1.2405880
Posted by utschwarz to elog nonpolar on Thu May 08 2008 at 20:06 UTC | info | related

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