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Local Density of States in Zero-Dimensional Semiconductor Structures
Physical Review Letters 87 (19), 196804 (2001)
info:doi/10.1103/PhysRevLett.87.196804
Indagine STM dei livelli elettronici in InAs(111) SFT. Gli SFT hanno confinamento quantico 0D.
Posted by mirko to InAs tetrahedra Fault Stacking on Mon Jun 05 2006 at 09:50 UTC | info | related
 
Onset of incoherency and defect introduction in the initial stages of molecular beam epitaxical growth of highly strained InxGa1–xAs on GaAs(100)
Onset of incoherency and defect introduction in the initial stages of molecular beam epitaxical growth of highly strained InxGa1−xAs on GaAs100
Applied Physics Letters 57 (20), 2110 (1990)
info:doi/10.1063/1.103914
Posted by mirko to InAs inchorence Dislocations Dots Quantum on Thu Jun 01 2006 at 10:40 UTC | info | related
 
Nature of strained InAs three-dimensional island formation and distribution on GaAs(100)
scitation.aip.org
Natura delle isole 3d di InAs in funzione dei parametri di crescita
Posted by mirko to distribution GaAs InAs formation Dots Quantum on Thu Jun 01 2006 at 10:33 UTC | info | related
 
InAs/GaAs(1 0 0) self-assembled quantum dots: arsenic pressure and capping effects
InAsGaAs100 selfassembled quantum dots arsenic pressure and capping effects
Journal of Crystal Growth 236 (1-3), 145 (2002)
info:doi/10.1016/S0022-0248(01)02391-0
Posted by mirko to Dots Quantum InAs layer CAP pressure As on Thu May 11 2006 at 09:32 UTC | info | related
 
Shape evolution of InAs quantum dots during overgrowth
Journal of Crystal Growth 249 (3-4), 416 (2003)
info:doi/10.1016/S0022-0248(02)02222-4
Studio dell'effetto del cap layer di InGaAs al variare di In, per large growth rate QDs
Posted by mirko to structure atomic layer CAP InAs on Thu May 04 2006 at 10:22 UTC | info | related

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