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Surface segregation of In atoms during molecular beam epitaxy and its influence on the energy levels in InGaAs/GaAs quantum wells
Applied Physics Letters 61 (5), 557 (1992)
info:doi/10.1063/1.107835
Interdiffusione e segregazione al variare di temperature e pressione di As
Posted by mirko to interdiffusion segregation pressure As on Thu May 25 2006 at 13:46 UTC | info | related
 
InAs/GaAs(1 0 0) self-assembled quantum dots: arsenic pressure and capping effects
InAsGaAs100 selfassembled quantum dots arsenic pressure and capping effects
Journal of Crystal Growth 236 (1-3), 145 (2002)
info:doi/10.1016/S0022-0248(01)02391-0
Posted by mirko to Dots Quantum InAs layer CAP pressure As on Thu May 11 2006 at 09:32 UTC | info | related

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