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Recent "semiconductor" articles

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Peierls distortion as a route to high thermoelectric performance in In4Se3-[dgr] crystals
Jong-Soo Rhyee et al.
Nature 459 (7249), 965-8 (18 Jun 2009)
 
Direct observation of a widely tunable bandgap in bilayer graphene
Yuanbo Zhang et al.
Nature 459 (7248), 820-3 (11 Jun 2009)
Posted by jsapan to semiconductor graphene on Fri Jun 26 2009 at 22:16 UTC | info | related
 
Nonthermal Photocoercivity Effect in a Low-Doped (Ga,Mn)As Ferromagnetic Semiconductor
Physical Review Letters 102 (18), 187401 (2009)
 
semiconductor quantum light sources
www.nature.com.ezlibproxy1.ntu.edu.sg
 
Good Carbon Additive
www.soulcast.com
 
Carbon Additive
www.metal-es.com
 
Strongly subluminal regime of optical-to-terahertz conversion in GaP
link.aip.org
We introduce and investigate a special regime of terahertz generation in electro-optic crystals with ultrashort laser pulses, in which neither phase-matching nor Cherenkov radiation mechanism are efficient. This regime occurs under the conditions that the optical group refractive index is larger than the low-frequency phase refractive index of the crystal, and the spectral bandwidth of the laser pulse is smaller than the frequency of the phase-matched terahertz wave. In this regime, that can be ...
Posted by Akira to semiconductor on Tue Apr 28 2009 at 13:57 UTC | info | related
 
Localized growth of InAs quantum dots on nanopatterned InP(001) substrates
Applied Physics Letters 94 (5), 051109 (2009)
Posted by tupuduq to Dots Quantum semiconductor on Tue Mar 10 2009 at 18:00 UTC | info | related
 
Suppressed bimodal size distribution of InAs quantum dots grown with an As[sub 2] source using molecular beam epitaxy
Journal of Applied Physics 104 (8), 083106 (2008)
Posted by tupuduq to Dots Quantum semiconductor on Tue Mar 10 2009 at 18:00 UTC | info | related
 
Reflectance anisotropy spectroscopy and the growth of low-dimensional materials
Z. Sobiesierski and D. Westwood
Thin Solid Films 318 (1-2), 140-7 (Apr 1998)
Reflectance anisotropy spectroscopy (RAS) has proved itself to be extremely sensitive to both surface reconstruction and ultrathin coverages of material on semiconductor surfaces. This in situ technique therefore lends itself to monitoring the formation of low-dimensional systems in a wide range of growth environments. The following systems have been studied under molecular beam epitaxy (MBE) conditions: (i) the deposition of sub-monolayer coverages of Si, to form Si [delta]-layers within GaAs; (ii) the As/P exchange reaction which leads to the formation of InAs surface quantum wells on the InP(001) surface; (iii) the self-organised growth of InAs quantum dots via strain relaxation of ultrathin layers (<2 ML) of InAs deposited on the GaAs(001) surface; (iv) the kinetics of hydrogen desorption from vicinal Si(001) surfaces. In our studies of Si/GaAs, it has been possible to deduce both that RAS is sensitive to coverages >=0.005 ML Si/GaAs, and to estimate the level of activity of Si donors within a single [delta]-plane. Analysis of time-resolved RAS measurements has led to: an activation energy of 1.23+/-0.05 eV being determined for the As/P exchange reaction on InP(001); a detailed study of the conditions which influence InAs island formation on GaAs; and the suggestion of a new desorption pathway for H on vicinal Si(001) surfaces.

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