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Recent "nanowires" articles

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Effects of surface resonance state on the plasmon resonance absorption of Ag nanoparticles embedded in partially oxidized amorphous Si matrix
Applied Physics Letters 76 (12), 1537 (2000)
info:doi/10.1063/1.126088
Posted by noel to nanowires on Wed Apr 08 2009 at 21:14 UTC | info | related
 
Photoanodic Properties of Sol−Gel-Derived Fe<sub>2</sub>O<sub>3</sub> Thin Films Containing Dispersed Gold and Silver Particles
The Journal of Physical Chemistry B 107 (46), 12713 (2003)
info:doi/10.1021/jp0303568
Posted by noel to nanowires on Wed Apr 08 2009 at 21:13 UTC | info | related
 
Synthesis of silver nanowires inside mesoporous MCM-41 host
Materials Letters 58 (7-8), 1168 (2004)
info:doi/10.1016/j.matlet.2003.09.008
Posted by noel to nanowires on Wed Apr 08 2009 at 21:11 UTC | info | related
 
Microscopic mechanism of templated self-assembly: Indium metallic atomic wires on Si(553)-Au
Physical Review B 79 (11), 113403 (2009)
info:doi/10.1103/physrevb.79.113403
Posted by davidbowler to Si(111) nanowires experiment on Thu Apr 02 2009 at 07:36 UTC | info | related
 
Electrical properties of individual ZnO nanowires
M Sakurai et al.
Nanotechnology 20, (15 Apr 2009)
info:doi/10.1088/0957-4484/20/15/155203
Posted by davidbowler to ZnO nanowires experiment on Fri Mar 27 2009 at 09:49 UTC | info | related
 
Size self-scaling effect in stacked InAs/InAlAs nanowire multilayers
Z. Sun et al.
Appl. Phys. Lett. 85 (21), 5061-3 (Nov 2004)
Posted by tupuduq to molecular beam epitaxial growth size effect aluminium compounds indium compounds semiconductor epitaxial layers multilayers Semiconductor growth III-V semiconductors photoluminescence nanowires on Tue Mar 10 2009 at 18:00 UTC | info | related
 
InAs nanowire formation on InP(001)
H. Parry, M. Ashwin, and T. Jones
J. Appl. Phys. 100 (11), 114305 (2006)
Posted by tupuduq to molecular beam epitaxial growth indium compounds Semiconductor growth semiconductor quantum wires III-V semiconductors texture annealing atomic force microscopy nanowires nucleation on Tue Mar 10 2009 at 18:00 UTC | info | related
 
Strain relaxation and stress-driven interdiffusion in InAs/InGaAs/InP nanowires
L. Nieto et al.
Appl. Phys. Lett. 91 (6), 063122-3 (Aug 2007)
Posted by tupuduq to chemical interdiffusion buffer layers indium compounds transmission electron microscopy stress relaxation semiconductor quantum wires III-V semiconductors gallium arsenide X-Ray Diffraction nanowires on Tue Mar 10 2009 at 18:00 UTC | info | related
 
Three-dimensional mapping of the strain anisotropy in self-assembled quantum-wires by grazing incidence x-ray diffraction
H. Gutierrez et al.
Appl. Phys. Lett. 85 (16), 3581-3 (Oct 2004)
Posted by tupuduq to indium compounds stress relaxation semiconductor quantum wires III-V semiconductors X-Ray Diffraction nanowires on Tue Mar 10 2009 at 18:00 UTC | info | related
 
Anti-correlated vertical self-organization of InAs nanowires in stacked structures on InP(0 0 1) with InAlAs spacer layer
M. Gendry et al.
Physica E: Low-dimensional Systems and Nanostructures 17, 505-6 (Apr 2003)
We address the anti-correlated vertical self-organization of stacked InAs nanowires grown on InP(0 0 1) using InAlAs as spacer layers. Using atomic force microscopy (AFM), transmission electron microscopy (TEM) and photoluminescence (PL) spectroscopy, we show that the lateral and vertical organization of the nanowires can be optimized by considering two main parameters: (i) the InAlAs spacer layer thickness (SLT) and (ii) the arsenic pressure during the InAs layer growth. With an optimal SLT/arsenic pressure combination, the nanowire size homogeneity can be improved, in ten-plane stacked structures with a SLT in the 10-15 nm range, to achieve PL linewidths as low as 90 meV at 8 K, comparing to the 130 meV linewidth obtained for single-plane structures.
Posted by tupuduq to InP(0 0 1) Stacked structures InAlAs InAs nanowires on Tue Mar 10 2009 at 18:00 UTC | info | related

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