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Dichromatic color tuning with InGaN-based light-emitting diodes
Natalie Fellows et al.
Applied Physics Letters 93 (12), 121112 (2008)
Posted by utschwarz with 1 comment to CRI semipolar led on Mon Sep 29 2008 at 12:15 UTC | info | related
 
Imagination Lighting
shop.imaginationlighting.com
LED Lamps have solid-state reliability. They are rated up to 200,000 hours of use without glass bulbs to break or filaments to burn out. They are extremely energy efficiency, using only 10% of the electricity required to power traditional incandescent bulbs. They are indestructible, are cool to the touch and do not require any transformers. They use your standard 120 volt house power.
 
Monolithic white light emitting diodes using a (Ga,In)N/GaN multiple quantum well light converter
B. Damilano et al.
Applied Physics Letters 93 (10), 101117 (2008)
Posted by utschwarz with 1 comment to CRI led on Wed Sep 17 2008 at 13:05 UTC | info | related
 
Integration of ZnO microcrystals with tailored dimensions forming light emitting diodes and UV photovoltaic cells.
Jesse Cole et al.
Nano letters 8 (5), 1477-81 (May 2008)
Posted by pfueller to ZnO led uv el on Tue Sep 09 2008 at 12:43 UTC | info | related
 
Ultraviolet GaN-based nanocolumn light-emitting diodes grown on n-(111) Si substrates by rf-plasma-assisted molecular beam epitaxy
Hiroto Sekiguchi et al.
physica status solidi (a) 205 (5), 1067-9 (18 Apr 2008)
*** rf-plasma-assisted MBE growth of MQD GaN/AlGaN UV LEDs *** 3 samples, Al-content in p-AlGaN cladding layer varied (8.8%, 13.1%, 25.1%) *** p-cladding layer coalescent (550 nm) *** height of NW 900 nm, diameter 100 nm *** EL measurements, peak at 354 nm (50 mA, RT) *** FWHM 200 meV (25.1% Al) and 300 meV (others) *** light vs. output (dc and pulsed), up to 300 mA, peak at 353.1 nm for pulsed *** peak shift due to heat generation, thus 40°C/W thermal resistance
 
GaN/AlGaN nanocolumn ultraviolet light-emitting diodes grown on n-(111) Si by RF-plasma-assisted molecular beam epitaxy
H. Sekiguchi, K. Kishino, and A. Kikuchi
Electronics Letters 44 (2), 151-2 (2008)
*** rf-plasma-assisted MBE growth of MQD GaN/AlGaN UV LEDs *** 2 samples, Al-content in p-AlGaN cladding layer varied (8.8%, 13.1%, 25.1%) *** p-cladding layer coalescent (550 nm) *** height of NW 900 nm, diameter 100 nm *** EL measurements, peak at 354 nm (50 mA, RT) *** FWHM 204 meV (25.1% Al) and 296 meV (13.1%) *** high Al content suppresses electron overflow to p-cladding layer *** broadening caused by donor-acceptor pair emission *** increasing FWHM with decreasing current *** FWHM narrower in micro-EL than in macro-EL - due to spatial inhomogeneity in MQDs
Posted by pfueller to NW GaN led on Tue Sep 09 2008 at 07:32 UTC | info | related
 
A hybrid green light-emitting diode comprised of n-ZnO/(InGaN/GaN) multi-quantum-wells/p-GaN
C. Bayram et al.
Applied Physics Letters 93 (8), 081111 (2008)
Posted by utschwarz with 1 comment to ZnO led on Sat Aug 30 2008 at 12:02 UTC | info | related
 
A two-colour heterojunction unipolar nanowire light-emitting diode by tunnel injection
Mariano Zimmler et al.
Nanotechnology 18, 395201 (03 Oct 2007)
Posted by pfueller to NW GaN led on Thu Aug 28 2008 at 08:18 UTC | info | related
 
LED Marquee - Text
javascriptbank.com
A changeable width/speed marquee with real multi-color LED digits. No fonts required, and it uses exclusive a only 36Kb image.
Posted by temp304 to marquee led javascript on Sat Aug 23 2008 at 16:12 UTC | info | related
 
InGaN/GaN Multiple Quantum Disk Nanocolumn Light-Emitting Diodes Grown on (111) Si Substrate
A. Kikuchi et al.
Japanese Journal of Applied Physics 43, 1524 (Dec 2004)
Posted by pfueller to MQD NW GaN led el on Tue Aug 19 2008 at 15:37 UTC | info | related

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