T.I. combination with Akon. So here s a dope track that surfaced today and has Empire drops on it. I have no idea where this came from but The Empire is known for putting out some tip exclusives.

The album was scheduled to be released on August 12, 2008 including Swagger Like Us by Ti features Kanye West, Jay-z and Lil Wayne

"Swing Ya Rag" is the second single from T.I.'s album Paper Trail. It features vocals and production by Swizz Beatz. On August 5, 2008 a behind the scenes video was released on the Internet.

"Whatever You Like" is the third single off of T.I.'s upcoming sixth studio album, Paper Trail. It was released on July 16, 2008. This is T.I.'s second song with the name "Whatever You Like". The first was "Whatever U Like" by Nicole Scherzinger featuring T.I.

Room-temperature formation of reactive M/InP(110) interfaces (where M denotes the 3d transition metals Ti, Cr, Fe, and Co) have been studied using high-resolution synchrotron radiation photoemission. Detailed line-shape analysis shows that these metals disrupt the substrate to form phosphides and release In atoms to the free surface. For Ti and Cr depositions, there are also ultrathin transition regions or precursors to reaction, which are not observed for Fe and Co, but these precursors do not correlate clearly with Schottky barrier development or final height. Critical coverages of ∼7 Å for Ti, ∼4 Å for Cr, ∼2.7 Å for Fe, and ∼1.6 Å for Co are found which reflect morphology changes in the disrupted overlayer, namely, growth of metal-phosphide nuclei and expulsion of In from the region where compound formation dominates. For depositions greater than ∼22 Å for Ti, ∼12 Å for Cr, and ∼7 Å for Fe and Co, the interface reactions become diffusion limited and the phosphide-rich regions are buried by metallic overlayers. At the same time, In atoms released during earlier stages continue to segregate because of their low solubility in these metals. Comparisons are made to GaAs-based interfaces where epitaxial growth of Fe and Co was observed.

The distribution of atomic species across metal–III-V-compound-semiconductor interfaces has been studied with Ar+-ion bombardment and x-ray photoemission complemented by synchrotron radiation photoemission. Results for (Ti, Cr, Co, Au)/GaAs, (Co, Cr)/InP, and (Cr, Au)/InSb show that room-temperature metal deposition induces substrate disruption. The details of reactions at these interfaces then play a critical role in determining the distribution of semiconductor atoms in the overlayers. Strong metal-anion reactions cause the expulsion of cations from regions where there is compound formation, and there is a characteristic coverage at which this occurs. The result is a cation-deficient region near the buried interface. Weak metal-anion reactions cause no such long-range species redistribution, except for surface segregation. For Au–III-V interfaces, there is an onset for anion surface segregation as a nearly pure Au layer decorated by semiconductor atoms in supersaturation evolves from the Au-anion-cation mixture found at low coverage. The driving force for atomic redistribution is the lowering in energy of the system, but this is restricted by kinetics and diffusion at low temperature. Studies for Cr/GaAs show the effect of altering the temperature and, hence, the amount of diffusion.

As if nobody seen this one coming from a mile away… Rapper T.I. pleaded guilty in a federal court on Thursday to three charges of illegally possessing weapons, reversing his plea of not guilty.