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Recombination dynamics of excitons and biexcitons in a hexagonal GaN epitaxial layer

Yoichi Kawakami et al.

Applied Physics Letters 69 (10), 1414-6 (1996)

info:doi/10.1063/1.117599

Posted by pfueller to TRPL biexciton exciton PL layer GaN luminescence on Tue Sep 09 2008 at 12:53 UTC | info | related

Ultraviolet GaN-based nanocolumn light-emitting diodes grown on n-(111) Si substrates by rf-plasma-assisted molecular beam epitaxy

Hiroto Sekiguchi et al.

physica status solidi (a) 205 (5), 1067-9 (18 Apr 2008)

info:doi/10.1002/pssa.200778733

*** rf-plasma-assisted MBE growth of MQD GaN/AlGaN UV LEDs *** 3 samples, Al-content in p-AlGaN cladding layer varied (8.8%, 13.1%, 25.1%) *** p-cladding layer coalescent (550 nm) *** height of NW 900 nm, diameter 100 nm *** EL measurements, peak at 354 nm (50 mA, RT) *** FWHM 200 meV (25.1% Al) and 300 meV (others) *** light vs. output (dc and pulsed), up to 300 mA, peak at 353.1 nm for pulsed *** peak shift due to heat generation, thus 40°C/W thermal resistance

Posted by pfueller to MQD electrical characterization NW AlGaN GaN led el on Tue Sep 09 2008 at 08:39 UTC | info | related

GaN/AlGaN nanocolumn ultraviolet light-emitting diodes grown on n-(111) Si by RF-plasma-assisted molecular beam epitaxy

H. Sekiguchi, K. Kishino, and A. Kikuchi

Electronics Letters 44 (2), 151-2 (2008)

info:doi/10.1049/el:20082930

*** rf-plasma-assisted MBE growth of MQD GaN/AlGaN UV LEDs *** 2 samples, Al-content in p-AlGaN cladding layer varied (8.8%, 13.1%, 25.1%) *** p-cladding layer coalescent (550 nm) *** height of NW 900 nm, diameter 100 nm *** EL measurements, peak at 354 nm (50 mA, RT) *** FWHM 204 meV (25.1% Al) and 296 meV (13.1%) *** high Al content suppresses electron overflow to p-cladding layer *** broadening caused by donor-acceptor pair emission *** increasing FWHM with decreasing current *** FWHM narrower in micro-EL than in macro-EL - due to spatial inhomogeneity in MQDs

Posted by pfueller to NW GaN led on Tue Sep 09 2008 at 07:32 UTC | info | related

Molecular beam epitaxial growth of high-quality GaN nanocolumns

J. van Nostrand et al.

Journal of Crystal Growth 287, 500-3 (Jan 2006)

info:doi/10.1016/j.jcrysgro.2005.11.073

Posted by pfueller to FWHM NW exciton PL GaN on Fri Sep 05 2008 at 16:13 UTC | info | related

Optical and structural study of GaN nanowires grown by catalyst-free molecular beam epitaxy. II. Sub-band-gap luminescence and electron irradiation effects

Lawrence Robins et al.

Journal of Applied Physics 101 (11), 113506 (2007)

info:doi/10.1063/1.2736266