Connotea: Bookmarks matching tag Interfaces
http://www.connotea.org/tag/Interfaces
Connotea: Bookmarks matching tag InterfacesDefect suppression from the compound semiconductor heterointerfaces
http://dx.doi.org/10.1109/iciprm.1996.492292
Posted by crlutz to InGaP Interfaces Defects on Wed Sep 17 2008crlutz2008-09-17T21:11:27ZInGaPInterfacesDefects0
]]>http://www.connotea.org/uri/2cd8af4705af716f7ed141da29962821http://www.connotea.org/user/crlutz/uri/2cd8af4705af716f7ed141da29962821Defect suppression from the compound semiconductor heterointerfacesS KalemA CurtisQ HartmannS ThomasD TurnbullH ChuangS BishopG Stillman10.1109/iciprm.1996.492292doi:10.1109/iciprm.1996.4922921996-xx-xx500Abrupt InGaP∕GaAs heterointerface grown by optimized gas-switching sequence in metal organic vapor phase epitaxy
http://dx.doi.org/10.1063/1.2884694
Posted by crlutz to InGaP Interfaces on Wed Sep 17 2008crlutz2008-09-17T21:07:19ZInGaPInterfaces0
]]>http://www.connotea.org/uri/4289e115fea11bce3b964b8cdfdd7f49http://www.connotea.org/user/crlutz/uri/4289e115fea11bce3b964b8cdfdd7f49Abrupt InGaP∕GaAs heterointerface grown by optimized gas-switching sequence in metal organic vapor phase epitaxyTakayuki NakanoTomonari ShiodaEiji AbeMasakazu SugiyamaNaomi EnomotoYoshiaki NakanoYukihiro Shimogaki10.1063/1.2884694doi:10.1063/1.28846942008-xx-xxApplied Physics Letters9211112106Effect of strained interfacial layer and large misorientation on SQW, 2DEG, and multisteps in InGaP/(In)GaAs heterostructures grown by MOVPE
http://dx.doi.org/10.1109/iciprm.1995.522094
Posted by crlutz to InGaP Interfaces on Wed Sep 17 2008crlutz2008-09-17T21:03:46ZInGaPInterfaces0
]]>http://www.connotea.org/uri/bc8e3e168a5d52e251c01e49c6800ad3http://www.connotea.org/user/crlutz/uri/bc8e3e168a5d52e251c01e49c6800ad3Effect of strained interfacial layer and large misorientation on SQW, 2DEG, and multisteps in InGaP/(In)GaAs heterostructures grown by MOVPET KikkawaK KasaiH OchimizuH Tanaka10.1109/iciprm.1995.522094doi:10.1109/iciprm.1995.5220941995-xx-xx130The effect of growth pause on the composition of InGaP/GaAs Heterointerfaces
http://dx.doi.org/10.1016/0022-0248(90)90370-z
Posted by crlutz to InGaP Interfaces on Wed Sep 17 2008crlutz2008-09-17T21:01:58ZInGaPInterfaces0
]]>http://www.connotea.org/uri/6b9fa6793a4b3c0f993b095fb0c18483http://www.connotea.org/user/crlutz/uri/6b9fa6793a4b3c0f993b095fb0c18483The effect of growth pause on the composition of InGaP/GaAs HeterointerfacesH LeeM HafichG Robinson10.1016/0022-0248(90)90370-zdoi:10.1016/0022-0248(90)90370-z1990-xx-xxJournal of Crystal Growth1051-4244In-depth analysis of the interfaces in InGaP/GaAs heterosystems
http://dx.doi.org/10.1051/epjap:2004143
Posted by crlutz to InGaP Interfaces solar on Wed Sep 17 2008crlutz2008-09-17T20:09:24ZInGaPInterfacessolar0
]]>http://www.connotea.org/uri/b2a2ff70a4e49cb4fcee14ba73a50c56http://www.connotea.org/user/crlutz/uri/b2a2ff70a4e49cb4fcee14ba73a50c56In-depth analysis of the interfaces in InGaP/GaAs heterosystemsC PelosiG AttoliniC PrigeriM BersaniD GiubertoniL VanzettiR Kudela10.1051/epjap:2004143doi:10.1051/epjap:20041432004-xx-xxThe European Physical Journal Applied Physics271-3379Bulk and Interface Deep Levels in InGaP/GaAs Heterostructures Grown by Tertiarybutylphosphine-Based Gas Source Molecular Beam Epitaxy
http://dx.doi.org/10.1143/jjap.40.2769
Posted by crlutz to InGaP Interfaces on Wed Sep 17 2008crlutz2008-09-17T20:07:09ZInGaPInterfaces0
]]>http://www.connotea.org/uri/f38baff02fcbc31ff086fdf134804f1ehttp://www.connotea.org/user/crlutz/uri/f38baff02fcbc31ff086fdf134804f1eBulk and Interface Deep Levels in InGaP/GaAs Heterostructures Grown by Tertiarybutylphosphine-Based Gas Source Molecular Beam EpitaxyF IshikawaA HiramaH Hasegawa10.1143/jjap.40.2769doi:10.1143/jjap.40.27692001-xx-xxJapanese Journal of Applied Physics40part 12769Interface properties for GaAs/InGaAlP heterojunctions by the capacitance-voltage profiling technique
http://dx.doi.org/10.1063/1.98028
Posted by crlutz to InGaP Interfaces on Tue Sep 16 2008crlutz2008-09-16T15:31:11ZInGaPInterfaces0
]]>http://www.connotea.org/uri/5cf4ffa4668ea62af3193f9bb0df1796http://www.connotea.org/user/crlutz/uri/5cf4ffa4668ea62af3193f9bb0df1796Interface properties for GaAs/InGaAlP heterojunctions by the capacitance-voltage profiling techniqueMiyoko WatanabeYasuo Ohba10.1063/1.98028doi:10.1063/1.980281987-xx-xxApplied Physics Letters5014906Characterization of interface charge at Ga0.52In0.48P/GaAs junctions using current–voltage and capacitance–voltage measurements
http://dx.doi.org/10.1063/1.117043
Posted by crlutz to InGaP Interfaces on Tue Sep 16 2008crlutz2008-09-16T15:29:16ZInGaPInterfaces0
]]>http://www.connotea.org/uri/6ae315ac44ed4c4aa8ed1ee8e6149536http://www.connotea.org/user/crlutz/uri/6ae315ac44ed4c4aa8ed1ee8e6149536Characterization of interface charge at Ga0.52In0.48P/GaAs junctions using current–voltage and capacitance–voltage measurementsT LimF WilliamsonM Nathan10.1063/1.117043doi:10.1063/1.1170431996-xx-xxApplied Physics Letters69111599Imagine una melodía y sonará · ELPAÍS.com
http://www.elpais.com/articulo/sociedad/Imagine/melodia/sonara/elpepisoc/20080614elpepisoc_14/Tes
Posted by bfernandez to Cerebro-ordenador transversal Interfaces on Tue Jun 17 2008bfernandez2008-06-17T14:49:10ZCerebro-ordenadortransversalInterfaces0
]]>http://www.connotea.org/uri/d5f7247f45e1034516004129793e12bbhttp://www.connotea.org/user/bfernandez/uri/d5f7247f45e1034516004129793e12bbImagine una melodía y sonará · ELPAÍS.comOptimal Design Considerations for Web OPAC Interfaces
http://www.calstatela.edu/library/ALA/ala-claOPAC.htm
Posted by trc23 and 1 other to Interfaces OPAC on Wed Jun 11 2008trc232008-06-11T03:14:31ZInterfacesOPAC0
]]>http://www.connotea.org/uri/b25177884fca91d57c303fa4d35f9f8dhttp://www.connotea.org/user/trc23/uri/b25177884fca91d57c303fa4d35f9f8dOptimal Design Considerations for Web OPAC Interfaces