Comments for doi:10.1063/1.2475564

Cubic InGaN/GaN multi-quantum-wells (MQWs) with high structural and optical quality are achieved by utilizing freestanding 3C-SiC (001) substrates and optimizing InGaN quantum well growth. Superlattice peaks up to fifth order are clearly resolved in x-ray diffraction. Bright green room temperature photoluminescence (PL) from c-InxGa1−xN/GaN MQWs (x=0.16) is observed. The full width at half maximum of the PL emission is about 240 meV at 300 K. The PL intensity increases with well thickness, prooving that polarization fields which can limit the performance of the wurtzite III-nitride based devices are absent. The diffusion length of excess carriers is about 17 nm.